FCH077N65F-F085 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 650V 54A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 148 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 15.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FCH077N65F-F085 Fairchild Semiconductor
Description: MOSFET N-CH 650V 54A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V, Power Dissipation (Max): 481W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FCH077N65F-F085 nach Preis ab 15.13 EUR bis 26.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FCH077N65F-F085 | Hersteller : onsemi / Fairchild |
MOSFET 650V N-Channel SuperFET II MOSFET |
auf Bestellung 900 Stücke: Lieferzeit 210-224 Tag (e) |
|
||||||||||||||||
 |
FCH077N65F-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 54A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
FCH077N65F-F085 | Hersteller : ONSEMI |
Description: ONSEMI - FCH077N65F-F085 - FCH077N65F-F085, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| FCH077N65F-F085 | Hersteller : ON Semiconductor |
|
auf Bestellung 3600 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
 |
FCH077N65F-F085 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 54A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FCH077N65F-F085 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| FCH077N65F-F085 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |