Technische Details FCH099N60E onsemi / Fairchild
Description: MOSFET N-CH 600V 37A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 18.5A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 380 V.
Weitere Produktangebote FCH099N60E
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FCH099N60E | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FCH099N60E | Hersteller : onsemi |
Description: MOSFET N-CH 600V 37A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 380 V |
Produkt ist nicht verfügbar |
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| FCH099N60E | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 111A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 87mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |