Produkte > ONSEMI > FCH170N60
FCH170N60

FCH170N60 onsemi


fch170n60-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 600V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V
auf Bestellung 8548 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.17 EUR
10+ 12.72 EUR
100+ 10.43 EUR
500+ 8.88 EUR
1000+ 7.49 EUR
2000+ 7.11 EUR
Mindestbestellmenge: 2
Produktrezensionen
Produktbewertung abgeben

Technische Details FCH170N60 onsemi

Description: MOSFET N-CH 600V 22A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V.

Weitere Produktangebote FCH170N60 nach Preis ab 7.38 EUR bis 15.11 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FCH170N60 FCH170N60 Hersteller : onsemi / Fairchild FCH170N60_D-2312014.pdf MOSFET SuperFET2 600V, 170mohm
auf Bestellung 442 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+15.11 EUR
10+ 11.02 EUR
120+ 9 EUR
510+ 8.01 EUR
1020+ 7.59 EUR
2520+ 7.49 EUR
5010+ 7.38 EUR
Mindestbestellmenge: 4
FCH170N60 Hersteller : ONSEMI ONSM-S-A0003584973-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FCH170N60 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
FCH170N60 Hersteller : ONSEMI fch170n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Kind of package: tube
Pulsed drain current: 66A
Power dissipation: 227W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO247
On-state resistance: 0.15Ω
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCH170N60 FCH170N60 Hersteller : ON Semiconductor fch170n60-d.pdf Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FCH170N60 Hersteller : ONSEMI fch170n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Kind of package: tube
Pulsed drain current: 66A
Power dissipation: 227W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO247
On-state resistance: 0.15Ω
Mounting: THT
Produkt ist nicht verfügbar