FCH35N60

FCH35N60 onsemi / Fairchild


FCH35N60_D-2311798.pdf Hersteller: onsemi / Fairchild
MOSFET 600V N-Channel SuperFET
auf Bestellung 158 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+15.24 EUR
10+ 13.05 EUR
25+ 11.83 EUR
100+ 10.89 EUR
250+ 9.65 EUR
450+ 9.15 EUR
900+ 8.53 EUR
Mindestbestellmenge: 4
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Technische Details FCH35N60 onsemi / Fairchild

Description: MOSFET N-CH 600V 35A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 17.5A, 10V, Power Dissipation (Max): 312.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V.

Weitere Produktangebote FCH35N60

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FCH35N60 FCH35N60 Hersteller : ON Semiconductor fch35n60-d.pdf Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
FCH35N60 Hersteller : ONSEMI fch35n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.2A; Idm: 105A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.2A
Pulsed drain current: 105A
Power dissipation: 312.5W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCH35N60 FCH35N60 Hersteller : onsemi fch35n60-d.pdf Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 17.5A, 10V
Power Dissipation (Max): 312.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
Produkt ist nicht verfügbar
FCH35N60 Hersteller : ONSEMI fch35n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.2A; Idm: 105A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.2A
Pulsed drain current: 105A
Power dissipation: 312.5W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar