FCHD190N65S3R0-F155 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 17A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Description: MOSFET N-CH 650V 17A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.68 EUR |
30+ | 7.68 EUR |
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Technische Details FCHD190N65S3R0-F155 onsemi
Description: MOSFET N-CH 650V 17A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 144W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 390µA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V.
Weitere Produktangebote FCHD190N65S3R0-F155 nach Preis ab 6.04 EUR bis 10.65 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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FCHD190N65S3R0-F155 | Hersteller : onsemi | MOSFET Easy Drive 650V 17A 190 mOhm |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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FCHD190N65S3R0-F155 | Hersteller : ON Semiconductor |
auf Bestellung 280 Stücke: Lieferzeit 21-28 Tag (e) |
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FCHD190N65S3R0-F155 | Hersteller : ONSEMI |
Description: ONSEMI - FCHD190N65S3R0-F155 - Leistungs-MOSFET, n-Kanal, 650 V, 17 A, 0.159 ohm, TO-247AD Drain-Source-Spannung Vds: 650 Dauer-Drainstrom Id: 17 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 144 Bauform - Transistor: TO-247AD Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3 Produktpalette: SUPERFET III Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.159 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4.5 SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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FCHD190N65S3R0-F155 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 17A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |