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FCI25N60N-F102

FCI25N60N-F102 onsemi / Fairchild


FCI25N60N_D-1806635.pdf Hersteller: onsemi / Fairchild
MOSFET 600V N-CHAN SupreMOS
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Lieferzeit 336-350 Tag (e)
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10+ 14.3 EUR
25+ 13.52 EUR
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Technische Details FCI25N60N-F102 onsemi / Fairchild

Description: MOSFET N-CH 600V 25A I2PAK, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V, Power Dissipation (Max): 216W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK (TO-262), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3352 pF @ 100 V.

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FCI25N60N-F102 FCI25N60N-F102 Hersteller : ON Semiconductor 4266286310275005fci25n60n-d.pdf Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-262 Tube
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FCI25N60N-F102 FCI25N60N-F102 Hersteller : Fairchild Semiconductor ONSM-S-A0003584785-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 25A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
Power Dissipation (Max): 216W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3352 pF @ 100 V
Produkt ist nicht verfügbar