FCI25N60N_F102

FCI25N60N-F102

FCI25N60N-F102

Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 25A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3352 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 216W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk

ONSM-S-A0003584785-1.pdf?t.download=true&u=5oefqw
verfügbar/auf Bestellung
auf Bestellung 787 Stücke
Lieferzeit 21-28 Tag (e)

102+ 7.06 EUR

Technische Details FCI25N60N-F102

Description: MOSFET N-CH 600V 25A I2PAK, Manufacturer: onsemi, Packaging: Tube, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 3352pF @ 100V, Power Dissipation (Max): 216W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Base Part Number: FCI25N60.

Preis FCI25N60N-F102 ab 7.06 EUR bis 15.08 EUR

FCI25N60N-F102
FCI25N60N-F102
Hersteller: onsemi / Fairchild
MOSFET 600V N-CHAN SupreMOS
FCI25N60N_D-2311775.pdf
auf Bestellung 382 Stücke
Lieferzeit 14-28 Tag (e)
4+ 15.08 EUR
10+ 13.6 EUR
25+ 12.84 EUR
100+ 11.13 EUR
FCI25N60N-F102
FCI25N60N-F102
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-262 Tube
4266286310275005fci25n60n-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCI25N60N-F102
FCI25N60N-F102
Hersteller: ON Semiconductor / Fairchild
MOSFET 600V N-CHAN SupreMOS
FCI25N60N_D-2311775.pdf
auf Bestellung 387 Stücke
Lieferzeit 14-28 Tag (e)
FCI25N60N-F102
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-262 Tube
fci25n60n-d.pdf ONSM-S-A0003584785-1.pdf?t.download=true&u=5oefqw
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCI25N60N-F102
FCI25N60N-F102
Hersteller: ON Semiconductor
Description: MOSFET N-CH 600V 25A I2PAK
Manufacturer: onsemi
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3352pF @ 100V
Power Dissipation (Max): 216W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number: FCI25N60
fci25n60n-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen