FCMT099N65S3
Technische Details FCMT099N65S3
Description: MOSFET N-CH 650V 30A POWER88, Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 400V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 3mA, Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 650V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Base Part Number: FCMT099, Package / Case: 4-PowerTSFN, Supplier Device Package: Power88, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 227W (Tc).
Preis FCMT099N65S3 ab 0 EUR bis 0 EUR
 Hersteller: ON Semiconductor N-Channel SuperFET III MOSFET 
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 Hersteller: ON Semiconductor / Fairchild MOSFET PQFN88 PKG, 99mohm 650V, SuperFET3
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FCMT099N65S3 Hersteller: ON Semiconductor Description: MOSFET N-CH 650V 30A POWER88 Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 400V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 650V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: FCMT099 Package / Case: 4-PowerTSFN Supplier Device Package: Power88 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 227W (Tc)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: onsemi Description: MOSFET N-CH 650V 30A POWER88 Part Status: Active Supplier Device Package: Power88 Vgs(th) (Max) @ Id: 4.5V @ 3mA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: onsemi Description: MOSFET N-CH 650V 30A POWER88 Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: Power88 Vgs(th) (Max) @ Id: 4.5V @ 3mA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Tape & Reel (TR)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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