FCMT099N65S3

FCMT099N65S3

Hersteller: ON Semiconductor

FCMT099N65S3-D.PDF fcmt099n65s3-d.pdf
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Technische Details FCMT099N65S3

Description: MOSFET N-CH 650V 30A POWER88, Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 400V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 3mA, Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 650V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Base Part Number: FCMT099, Package / Case: 4-PowerTSFN, Supplier Device Package: Power88, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 227W (Tc).

Preis FCMT099N65S3 ab 0 EUR bis 0 EUR

FCMT099N65S3
FCMT099N65S3
Hersteller: ON Semiconductor
N-Channel SuperFET III MOSFET
fcmt099n65s3-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCMT099N65S3
FCMT099N65S3
Hersteller: ON Semiconductor / Fairchild
MOSFET PQFN88 PKG, 99mohm 650V, SuperFET3
FCMT099N65S3_D-1805498.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCMT099N65S3
Hersteller: ON Semiconductor
Description: MOSFET N-CH 650V 30A POWER88
Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 400V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: FCMT099
Package / Case: 4-PowerTSFN
Supplier Device Package: Power88
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
FCMT099N65S3-D.PDF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCMT099N65S3
FCMT099N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 30A POWER88
Part Status: Active
Supplier Device Package: Power88
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
fcmt099n65s3-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FCMT099N65S3
FCMT099N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 30A POWER88
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: Power88
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
fcmt099n65s3-d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen