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FCMT199N60

FCMT199N60 onsemi

fcmt199n60-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+6.03 EUR
Mindestbestellmenge: 3000
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Technische Details FCMT199N60 onsemi

Description: MOSFET N-CH 600V 20.2A POWER88, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: Power88, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V.

Weitere Produktangebote FCMT199N60 nach Preis ab 6.06 EUR bis 12.48 EUR

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FCMT199N60 FCMT199N60 Hersteller : onsemi fcmt199n60-d.pdf Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 18447 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.38 EUR
10+ 10.4 EUR
100+ 8.41 EUR
500+ 7.48 EUR
1000+ 6.4 EUR
Mindestbestellmenge: 3
FCMT199N60 FCMT199N60 Hersteller : onsemi / Fairchild FCMT199N60_D-2311886.pdf MOSFET 199mohm 600V SuperFET2
auf Bestellung 7909 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+12.48 EUR
10+ 10.5 EUR
100+ 8.48 EUR
500+ 7.54 EUR
1000+ 6.45 EUR
3000+ 6.06 EUR
Mindestbestellmenge: 5
FCMT199N60 FCMT199N60 Hersteller : ON Semiconductor fcmt199n60.pdf Trans MOSFET N-CH 600V 20.2A 5-Pin Power 88 EP T/R
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