Technische Details FCP099N65S3 ON Semiconductor
Description: MOSFET N-CH 650V 30A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V.
Weitere Produktangebote FCP099N65S3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FCP099N65S3 | Hersteller : ON Semiconductor |
 N-Channel SuperFET III MOSFET |
Produkt ist nicht verfügbar |
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FCP099N65S3 | Hersteller : ONSEMI |
Description: ONSEMI - FCP099N65S3 - Leistungs-MOSFET, n-Kanal, 650 V, 30 A, 0.079 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650 Dauer-Drainstrom Id: 30 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 227 Gate-Source-Schwellenspannung, max.: 4.5 Verlustleistung: 227 Bauform - Transistor: TO-220 Anzahl der Pins: 3 Produktpalette: SuperFET III Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.079 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.079 SVHC: Lead (10-Jun-2022) |
Produkt ist nicht verfügbar |
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FCP099N65S3 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V |
Produkt ist nicht verfügbar |
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FCP099N65S3 | Hersteller : onsemi / Fairchild |
MOSFET SuperFET3 650V 99 mOhm,TO220 PKG |
Produkt ist nicht verfügbar |