FCP165N65S3R0 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 3527 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
143+ | 5.04 EUR |
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Technische Details FCP165N65S3R0 onsemi
Description: MOSFET N-CH 650V 19A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V, Power Dissipation (Max): 154W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.9mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote FCP165N65S3R0 nach Preis ab 5.77 EUR bis 9.44 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FCP165N65S3R0 | Hersteller : onsemi | MOSFET SUPERFET3 650V TO220 PKG |
auf Bestellung 800 Stücke: Lieferzeit 14-28 Tag (e) |
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FCP165N65S3R0 | Hersteller : ON Semiconductor |
auf Bestellung 700 Stücke: Lieferzeit 21-28 Tag (e) |
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FCP165N65S3R0 | Hersteller : ONSEMI |
Description: ONSEMI - FCP165N65S3R0 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 |
auf Bestellung 2115 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP165N65S3R0 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FCP165N65S3R0 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FCP165N65S3R0 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 19A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
Produkt ist nicht verfügbar |