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FCP190N60-GF102

FCP190N60-GF102 onsemi / Fairchild


FCP190N60_GF102_D-1806494.pdf Hersteller: onsemi / Fairchild
MOSFET 20.2A 600V MOSFET
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Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.27 EUR
10+ 7.44 EUR
25+ 7.05 EUR
100+ 6.11 EUR
Mindestbestellmenge: 7
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Technische Details FCP190N60-GF102 onsemi / Fairchild

Description: MOSFET N-CH 600V 20.2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V.

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FCP190N60_GF102 FCP190N60_GF102 Hersteller : Fairchild Semiconductor FCP190N60_GF102.pdf Description: MOSFET N-CH 600V TO-220-3
auf Bestellung 527 Stücke:
Lieferzeit 21-28 Tag (e)
FCP190N60-GF102 FCP190N60-GF102 Hersteller : ON Semiconductor fcp190n60_gf102.pdf Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220 Tube
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FCP190N60-GF102 FCP190N60-GF102 Hersteller : onsemi fcp190n60-gf102-d.pdf Description: MOSFET N-CH 600V 20.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Produkt ist nicht verfügbar