FCP190N65F onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 20.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V
Description: MOSFET N-CH 650V 20.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 10.4 EUR |
50+ | 8.23 EUR |
100+ | 7.06 EUR |
500+ | 6.27 EUR |
1000+ | 5.37 EUR |
2000+ | 5.06 EUR |
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Technische Details FCP190N65F onsemi
Description: MOSFET N-CH 650V 20.6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 2mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V.
Weitere Produktangebote FCP190N65F nach Preis ab 5.38 EUR bis 10.45 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FCP190N65F | Hersteller : onsemi / Fairchild | MOSFET N-Channel SuperFET II FRFET MOSFET |
auf Bestellung 1555 Stücke: Lieferzeit 14-28 Tag (e) |
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FCP190N65F | Hersteller : ON Semiconductor |
auf Bestellung 1530 Stücke: Lieferzeit 21-28 Tag (e) |
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FCP190N65F | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |