auf Bestellung 1600 Stücke:
Lieferzeit 804-818 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 4.6 EUR |
| 15+ | 3.69 EUR |
| 100+ | 3.02 EUR |
| 250+ | 2.78 EUR |
| 500+ | 2.54 EUR |
| 1000+ | 2.18 EUR |
| 2500+ | 2.07 EUR |
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Technische Details FCP190N65S3R0 onsemi
Description: MOSFET N-CH 650V 17A TO220-3, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 144W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.7mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V.
Weitere Produktangebote FCP190N65S3R0
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FCP190N65S3R0 | Hersteller : ON Semiconductor |
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auf Bestellung 333 Stücke: Lieferzeit 21-28 Tag (e) |
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FCP190N65S3R0 | Hersteller : ON Semiconductor |
N Channel MOSFET |
Produkt ist nicht verfügbar |
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FCP190N65S3R0 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 17A TO220-3 Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V |
Produkt ist nicht verfügbar |
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FCP190N65S3R0 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 17A TO220-3 Packaging: Cut Tape (CT) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V |
Produkt ist nicht verfügbar |