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FCP220N80

FCP220N80 onsemi

fcp220n80-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 800V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 11.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.3mA
Supplier Device Package: TO-220-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 100 V
auf Bestellung 180 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+17.81 EUR
50+ 14.22 EUR
100+ 12.72 EUR
Mindestbestellmenge: 2
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Technische Details FCP220N80 onsemi

Description: MOSFET N-CH 800V 23A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 11.5A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.3mA, Supplier Device Package: TO-220-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 100 V.

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