FCP22N60N onsemi
Hersteller: onsemiDescription: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±45V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
auf Bestellung 151 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 11.34 EUR |
| 50+ | 8.98 EUR |
| 100+ | 7.69 EUR |
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Technische Details FCP22N60N onsemi
Description: MOSFET N-CH 600V 22A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±45V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V.
Weitere Produktangebote FCP22N60N nach Preis ab 5.88 EUR bis 11.41 EUR
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FCP22N60N | Hersteller : onsemi / Fairchild |
MOSFET 600V N-Channel SupreMOS |
auf Bestellung 389 Stücke: Lieferzeit 14-28 Tag (e) |
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FCP22N60N Produktcode: 150770 |
Transistoren > MOSFET N-CH |
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FCP22N60N | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube |
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| FCP22N60N | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube |
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FCP22N60N | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB Type of transistor: N-MOSFET Technology: SuperMOS® Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±45V On-state resistance: 0.165Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FCP22N60N | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB Type of transistor: N-MOSFET Technology: SuperMOS® Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±45V On-state resistance: 0.165Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |