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FCP380N60E

FCP380N60E Fairchild Semiconductor

FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 10.2A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 25616 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
213+3.39 EUR
Mindestbestellmenge: 213
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Technische Details FCP380N60E Fairchild Semiconductor

Description: MOSFET N-CH 600V 10.2A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V, Power Dissipation (Max): 106W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V.

Weitere Produktangebote FCP380N60E nach Preis ab 3.07 EUR bis 7.05 EUR

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FCP380N60E FCP380N60E Hersteller : onsemi / Fairchild FCPF380N60E_D-2311647.pdf MOSFET 600V N-CHAN MOSFET
auf Bestellung 565 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.05 EUR
10+ 5.85 EUR
100+ 4.84 EUR
500+ 4.03 EUR
800+ 3.33 EUR
2400+ 3.17 EUR
5600+ 3.07 EUR
Mindestbestellmenge: 8
FCP380N60E Hersteller : ON Semiconductor FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw ONSM-S-A0003584055-1.pdf?t.download=true&u=5oefqw
auf Bestellung 730 Stücke:
Lieferzeit 21-28 Tag (e)
FCP380N60E FCP380N60E Hersteller : ON Semiconductor 4267012182923393fcpf380n60e-d.pdf Trans MOSFET N-CH 600V 10.2A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FCP380N60E FCP380N60E Hersteller : onsemi ONSM-S-A0003584055-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 10.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Produkt ist nicht verfügbar