Produkte > ON SEMICONDUCTOR > FCP9N60N-F102
FCP9N60N-F102

FCP9N60N-F102 ON Semiconductor


fcp9n60n.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 9A Tube
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details FCP9N60N-F102 ON Semiconductor

Description: MOSFET N-CHANNEL 600V 9A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V, Power Dissipation (Max): 83.3W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V.

Weitere Produktangebote FCP9N60N-F102

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FCP9N60N-F102 FCP9N60N-F102 Hersteller : onsemi Description: MOSFET N-CHANNEL 600V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Produkt ist nicht verfügbar
FCP9N60N-F102 FCP9N60N-F102 Hersteller : onsemi / Fairchild FCPF9N60NT_D-2311982.pdf MOSFET FCP9N60N, in TO220 F102 T/F option
Produkt ist nicht verfügbar