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FCPF16N60NT

FCPF16N60NT onsemi

FAIRS46028-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V
auf Bestellung 909 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.05 EUR
50+ 8.74 EUR
100+ 7.5 EUR
500+ 6.66 EUR
Mindestbestellmenge: 3
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Technische Details FCPF16N60NT onsemi

Description: MOSFET N-CH 600V 16A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V, Power Dissipation (Max): 35.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V.

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