FCPF250N65S3L1 ON Semiconductor / Fairchild
auf Bestellung 1688 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details FCPF250N65S3L1 ON Semiconductor / Fairchild
Description: MOSFET N-CH 650V 12A TO220F-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.2mA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V.
Weitere Produktangebote FCPF250N65S3L1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FCPF250N65S3L1 | Hersteller : ON Semiconductor |
auf Bestellung 9840 Stücke: Lieferzeit 21-28 Tag (e) |
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FCPF250N65S3L1 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FCPF250N65S3L1 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 12A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V |
Produkt ist nicht verfügbar |