Technische Details FCPF600N60ZL1 ON Semiconductor
Description: MOSFET N-CH 650V 7.4A TO220F, Packaging: Tape & Reel (TR), Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V.
Weitere Produktangebote FCPF600N60ZL1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FCPF600N60ZL1 | Hersteller : ON Semiconductor |
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auf Bestellung 988 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCPF600N60ZL1 | Hersteller : ON Semiconductor |
N-Channel SuperFET II MOSFET 600 V, 7.4 A, 600 m OHM |
Produkt ist nicht verfügbar |
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FCPF600N60ZL1 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 7.4A TO220F Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V |
Produkt ist nicht verfügbar |