FCU4300N80Z onsemi / Fairchild
auf Bestellung 48495 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
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200+ | 0.26 EUR |
589+ | 0.088 EUR |
1429+ | 0.036 EUR |
2858+ | 0.018 EUR |
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Technische Details FCU4300N80Z onsemi / Fairchild
Description: MOSFET N-CH 800V 1.6A I-PAK, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V, Power Dissipation (Max): 27.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 160µA, Supplier Device Package: I-PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V.
Weitere Produktangebote FCU4300N80Z nach Preis ab 1.43 EUR bis 1.43 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FCU4300N80Z | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 800V 1.6A I-PAK Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V Power Dissipation (Max): 27.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 160µA Supplier Device Package: I-PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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FCU4300N80Z | Hersteller : ON Semiconductor |
auf Bestellung 8995 Stücke: Lieferzeit 21-28 Tag (e) |