FCU900N60Z onsemi
Hersteller: onsemiDescription: MOSFET N-CH 600V 4.5A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
auf Bestellung 112345 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 379+ | 1.9 EUR |
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Technische Details FCU900N60Z onsemi
Description: MOSFET N-CH 600V 4.5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: IPAK, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V.
Weitere Produktangebote FCU900N60Z nach Preis ab 1.73 EUR bis 3.98 EUR
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FCU900N60Z | Hersteller : onsemi / Fairchild |
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auf Bestellung 1733 Stücke: Lieferzeit 14-28 Tag (e) |
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FCU900N60Z | Hersteller : ONSEMI |
Description: ONSEMI - FCU900N60Z - Leistungs-MOSFET, n-Kanal, 600 V, 4.5 A, 0.82 ohm, TO-251, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 4.5 Qualifikation: - Verlustleistung Pd: 52 Gate-Source-Schwellenspannung, max.: 2.5 Verlustleistung: 52 Bauform - Transistor: TO-251 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.82 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.82 SVHC: Lead (10-Jun-2022) |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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FCU900N60Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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FCU900N60Z | Hersteller : onsemi |
Description: MOSFET N-CH 600V 4.5A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: IPAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V |
Produkt ist nicht verfügbar |