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FD1200R17KE3KB2NOSA1 Infineon Technologies


FD1200R17KE3-K_B2_Rev2.3_2013-11-25.pdf Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.2kA
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1700 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
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Technische Details FD1200R17KE3KB2NOSA1 Infineon Technologies

Description: IGBT MODULE 1700V 1200A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Chopper, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.2kA, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 1700 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 6600 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 110 nF @ 25 V.