FDA032N08 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 75V 120A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
auf Bestellung 274 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 10.63 EUR |
| 30+ | 8.44 EUR |
| 120+ | 7.23 EUR |
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Technische Details FDA032N08 onsemi
Description: MOSFET N-CH 75V 120A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V.
Weitere Produktangebote FDA032N08 nach Preis ab 5.72 EUR bis 10.71 EUR
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FDA032N08 | Hersteller : onsemi / Fairchild |
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auf Bestellung 432 Stücke: Lieferzeit 14-28 Tag (e) |
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FDA032N08 Produktcode: 169103 |
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FDA032N08 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube |
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FDA032N08 | Hersteller : ONSEMI |
Description: ONSEMI - FDA032N08 - MOSFET'S - SINGLE SVHC: Lead (10-Jun-2022) |
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| FDA032N08 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 70V Drain current: 120A Pulsed drain current: 940A Power dissipation: 37.5W Case: TO3PN Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FDA032N08 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FDA032N08 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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| FDA032N08 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 70V Drain current: 120A Pulsed drain current: 940A Power dissipation: 37.5W Case: TO3PN Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |