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FDB016N04AL7

FDB016N04AL7 onsemi

fdb016n04al7-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+5.93 EUR
Mindestbestellmenge: 800
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Technische Details FDB016N04AL7 onsemi

Description: MOSFET N-CH 40V 160A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V, Power Dissipation (Max): 283W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V.

Weitere Produktangebote FDB016N04AL7 nach Preis ab 6.67 EUR bis 11.96 EUR

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FDB016N04AL7 FDB016N04AL7 Hersteller : onsemi fdb016n04al7-d.pdf Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.8 EUR
10+ 8.25 EUR
100+ 6.67 EUR
Mindestbestellmenge: 3
FDB016N04AL7 FDB016N04AL7 Hersteller : onsemi / Fairchild FDB016N04AL7_D-1806698.pdf MOSFET 40V N-Channel PowerTrench MOSFET
auf Bestellung 769 Stücke:
Lieferzeit 234-248 Tag (e)
Anzahl Preis ohne MwSt
5+11.96 EUR
100+ 10.76 EUR
500+ 9.46 EUR
Mindestbestellmenge: 5
FDB016N04AL7 Hersteller : ON Semiconductor fdb016n04al7-d.pdf
auf Bestellung 740 Stücke:
Lieferzeit 21-28 Tag (e)
FDB016N04AL7 FDB016N04AL7 Hersteller : ON Semiconductor fdb016n04al7jp-d.pdf Trans MOSFET N-CH Si 40V 306A 7-Pin(6+Tab) D2PAK T/R
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