auf Bestellung 13599 Stücke:
Lieferzeit 451-465 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 10.24 EUR |
| 10+ | 9.2 EUR |
| 100+ | 7.57 EUR |
| 500+ | 6.99 EUR |
| 800+ | 6.42 EUR |
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Technische Details FDB0170N607L onsemi / Fairchild
Description: MOSFET N-CH 60V 300A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V, Power Dissipation (Max): 3.8W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V.
Weitere Produktangebote FDB0170N607L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDB0170N607L | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 300A 7-Pin(6+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB0170N607L | Hersteller : onsemi |
Description: MOSFET N-CH 60V 300A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V |
Produkt ist nicht verfügbar |
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FDB0170N607L | Hersteller : onsemi |
Description: MOSFET N-CH 60V 300A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19250 pF @ 30 V |
Produkt ist nicht verfügbar |