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FDB024N04AL7

FDB024N04AL7 Fairchild Semiconductor

FAIRS47112-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 40V 100A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
auf Bestellung 33049 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
105+6.89 EUR
Mindestbestellmenge: 105
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Technische Details FDB024N04AL7 Fairchild Semiconductor

Description: MOSFET N-CH 40V 100A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V.

Weitere Produktangebote FDB024N04AL7 nach Preis ab 10.56 EUR bis 14.3 EUR

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FDB024N04AL7 FDB024N04AL7 Hersteller : onsemi / Fairchild FDB024N04AL7_D-1806782.pdf MOSFET 40V 2.4MOHM D2PAK-7L PowerTrench MOSFET
auf Bestellung 816 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.3 EUR
10+ 12.87 EUR
25+ 12.17 EUR
100+ 10.56 EUR
Mindestbestellmenge: 4
FDB024N04AL7 FDB024N04AL7 Hersteller : ON Semiconductor 3677455586900519fdb024n04al7.pdf Trans MOSFET N-CH 40V 219A 7-Pin(6+Tab) D2PAK T/R
Produkt ist nicht verfügbar
FDB024N04AL7 FDB024N04AL7 Hersteller : onsemi fdb024n04al7-d.pdf Description: MOSFET N-CH 40V 100A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Produkt ist nicht verfügbar