FDB024N06 ON Semiconductor
auf Bestellung 607 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 8.03 EUR |
| 24+ | 6.47 EUR |
| 26+ | 5.83 EUR |
| 100+ | 4.9 EUR |
| 250+ | 4.45 EUR |
| 500+ | 3.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDB024N06 ON Semiconductor
Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V.
Weitere Produktangebote FDB024N06 nach Preis ab 3.26 EUR bis 12.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDB024N06 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 60V 265A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 607 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FDB024N06 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V |
auf Bestellung 125 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
FDB024N06 | Hersteller : onsemi / Fairchild |
MOSFET 60V N-Channel PowerTrench |
auf Bestellung 1786 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
FDB024N06 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 265A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDB024N06 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 265A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
FDB024N06 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 190A Pulsed drain current: 1060A Power dissipation: 395W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 226nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDB024N06 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V Power Dissipation (Max): 395W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDB024N06 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 190A Pulsed drain current: 1060A Power dissipation: 395W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 226nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |