FDB024N08BL7 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 120A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
auf Bestellung 89600 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 6.64 EUR |
| 1600+ | 5.68 EUR |
| 2400+ | 5.35 EUR |
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Technische Details FDB024N08BL7 onsemi
Description: MOSFET N-CH 80V 120A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Power Dissipation (Max): 246W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V.
Weitere Produktangebote FDB024N08BL7 nach Preis ab 5.38 EUR bis 11.08 EUR
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FDB024N08BL7 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 120A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 246W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V |
auf Bestellung 89995 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDB024N08BL7 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK Mounting: SMD Power dissipation: 246W Polarisation: unipolar Kind of package: reel; tape Gate charge: 178nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 916A Case: D2PAK Drain-source voltage: 80V Drain current: 162A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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| FDB024N08BL7 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK Mounting: SMD Power dissipation: 246W Polarisation: unipolar Kind of package: reel; tape Gate charge: 178nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 916A Case: D2PAK Drain-source voltage: 80V Drain current: 162A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |