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FDB0250N807L

FDB0250N807L onsemi

fdb0250n807l-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 240A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
auf Bestellung 760 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.77 EUR
10+ 13.26 EUR
100+ 10.86 EUR
Mindestbestellmenge: 2
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Technische Details FDB0250N807L onsemi

Description: MOSFET N-CH 80V 240A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V, Power Dissipation (Max): 3.8W (Ta), 214W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V.

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FDB0250N807L Hersteller : ON Semiconductor fdb0250n807l-d.pdf
auf Bestellung 760 Stücke:
Lieferzeit 21-28 Tag (e)
FDB0250N807L FDB0250N807L Hersteller : ON Semiconductor fdb0250n807lcn-d.pdf Trans MOSFET N-CH 80V 240A 7-Pin(6+Tab) D2PAK T/R
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FDB0250N807L FDB0250N807L Hersteller : onsemi fdb0250n807l-d.pdf Description: MOSFET N-CH 80V 240A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15400 pF @ 40 V
Produkt ist nicht verfügbar
FDB0250N807L FDB0250N807L Hersteller : onsemi / Fairchild FDB0250N807L_D-2312179.pdf MOSFET 80V TO263 7L JEDEC GREEN EMC
Produkt ist nicht verfügbar