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FDB029N06

FDB029N06 onsemi


fdb029n06-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
auf Bestellung 7200 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+10.75 EUR
1600+ 9.37 EUR
2400+ 9.02 EUR
Mindestbestellmenge: 800
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Technische Details FDB029N06 onsemi

Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V.

Weitere Produktangebote FDB029N06 nach Preis ab 8.79 EUR bis 16.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDB029N06 FDB029N06 Hersteller : onsemi / Fairchild FDB029N06_D-2311984.pdf MOSFET NCH 60V 2.9Mohm
auf Bestellung 802 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+13.47 EUR
10+ 12.53 EUR
25+ 12.09 EUR
100+ 10.87 EUR
250+ 10.76 EUR
500+ 10.01 EUR
800+ 8.79 EUR
Mindestbestellmenge: 4
FDB029N06 FDB029N06 Hersteller : onsemi fdb029n06-d.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
auf Bestellung 7200 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+16.51 EUR
10+ 14.92 EUR
100+ 12.35 EUR
Mindestbestellmenge: 2
FDB029N06 FDB029N06 Hersteller : ON Semiconductor 4505652550987506fdb029n06-d.pdf Trans MOSFET N-CH Si 60V 193A 3-Pin(2+Tab) D2PAK T/R
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