FDB035N10A onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
auf Bestellung 703 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.96 EUR |
| 10+ | 13.4 EUR |
| 100+ | 10.84 EUR |
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Technische Details FDB035N10A onsemi
Description: MOSFET N-CH 100V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V, Power Dissipation (Max): 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V.
Weitere Produktangebote FDB035N10A nach Preis ab 8.58 EUR bis 16.07 EUR
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FDB035N10A | Hersteller : ONSEMI |
Description: ONSEMI - FDB035N10A - Leistungs-MOSFET, n-Kanal, 100 V, 214 A, 0.003 ohm, TO-263 (D2PAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100 Dauer-Drainstrom Id: 214 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 333 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3 Produktpalette: PowerTrench Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.003 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 4 SVHC: Lead (10-Jun-2022) |
auf Bestellung 692 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB035N10A | Hersteller : ONSEMI |
Description: ONSEMI - FDB035N10A - Leistungs-MOSFET, n-Kanal, 100 V, 214 A, 0.003 ohm, TO-263 (D2PAK), Oberflächenmontage SVHC: Lead (10-Jun-2022) |
auf Bestellung 692 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
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FDB035N10A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 214A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB035N10A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 214A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB035N10A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 214A 3-Pin(2+Tab) D2PAK T/R |
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FDB035N10A | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 856A; 333W; D2PAK Type of transistor: N-MOSFET Power dissipation: 333W Polarisation: unipolar Kind of package: reel; tape Gate charge: 116nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 856A Mounting: SMD Case: D2PAK Drain-source voltage: 100V Drain current: 120A On-state resistance: 3.5mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDB035N10A | Hersteller : onsemi |
Description: MOSFET N-CH 100V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB035N10A | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 856A; 333W; D2PAK Type of transistor: N-MOSFET Power dissipation: 333W Polarisation: unipolar Kind of package: reel; tape Gate charge: 116nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 856A Mounting: SMD Case: D2PAK Drain-source voltage: 100V Drain current: 120A On-state resistance: 3.5mΩ |
Produkt ist nicht verfügbar |