FDB047N10 ON Semiconductor
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 3.28 EUR |
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Technische Details FDB047N10 ON Semiconductor
Description: MOSFET N-CH 100V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V.
Weitere Produktangebote FDB047N10 nach Preis ab 2.78 EUR bis 8.5 EUR
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FDB047N10 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB047N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB047N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB047N10 | Hersteller : onsemi / Fairchild |
MOSFET 100V N-Channel PowerTrench |
auf Bestellung 10690 Stücke: Lieferzeit 466-480 Tag (e) |
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FDB047N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDB047N10 | Hersteller : FSC |
TO263 10+ |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDB047N10 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 164A Pulsed drain current: 656A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 0.21µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDB047N10 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB047N10 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FDB047N10 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 164A Pulsed drain current: 656A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 0.21µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |