FDB070AN06A0 ONSEMI
Hersteller: ONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 175W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 3.98 EUR |
| 800+ | 2.6 EUR |
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Technische Details FDB070AN06A0 ONSEMI
Description: MOSFET N-CH 60V 15A/80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V, Power Dissipation (Max): 175W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Weitere Produktangebote FDB070AN06A0 nach Preis ab 3.65 EUR bis 7.83 EUR
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FDB070AN06A0 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 175W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB070AN06A0 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 15A/80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
auf Bestellung 7200 Stücke: Lieferzeit 21-28 Tag (e) |
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FDB070AN06A0 | Hersteller : onsemi / Fairchild |
MOSFET N-Channel PT 6V 8A 7mOhm |
auf Bestellung 1657 Stücke: Lieferzeit 14-28 Tag (e) |
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FDB070AN06A0 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 15A/80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
auf Bestellung 7986 Stücke: Lieferzeit 21-28 Tag (e) |
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FDB070AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) D2PAK T/R |
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