FDB12N50FTM-WS onsemi
Hersteller: onsemiDescription: MOSFET N-CH 500V 11.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
auf Bestellung 39 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.52 EUR |
| 10+ | 3.74 EUR |
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Technische Details FDB12N50FTM-WS onsemi
Description: MOSFET N-CH 500V 11.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V.
Weitere Produktangebote FDB12N50FTM-WS nach Preis ab 3.72 EUR bis 5.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDB12N50FTM-WS | Hersteller : onsemi / Fairchild |
MOSFET 500V 11.5A 0.7Ohm N-Channel |
auf Bestellung 210 Stücke: Lieferzeit 14-28 Tag (e) |
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FDB12N50FTM-WS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB12N50FTM-WS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Pulsed drain current: 46A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDB12N50FTM-WS | Hersteller : onsemi |
Description: MOSFET N-CH 500V 11.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB12N50FTM-WS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Pulsed drain current: 46A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |