FDB13AN06A0 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 10.9A/62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 266 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 5.04 EUR |
| 10+ | 4.19 EUR |
| 100+ | 3.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDB13AN06A0 onsemi
Description: MOSFET N-CH 60V 10.9A/62A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V.
Weitere Produktangebote FDB13AN06A0 nach Preis ab 2.44 EUR bis 5.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDB13AN06A0 | Hersteller : onsemi / Fairchild |
MOSFET N-Channel PowerTrench |
auf Bestellung 6267 Stücke: Lieferzeit 182-196 Tag (e) |
|
||||||||||||
 |
FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
|
|
FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
| FDB13AN06A0 | Hersteller : ON-Semicoductor |
Transistor N-MOSFET; 60V; 10V; 13,5mOhm; 62A; 115W; -55°C ~ 175°C; FDB13AN06A0 TFDB13AN06A0 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
|
|
FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FDB13AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FDB13AN06A0 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Power dissipation: 115W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FDB13AN06A0 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 10.9A/62A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FDB13AN06A0 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Power dissipation: 115W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |