auf Bestellung 1600 Stücke:
Lieferzeit 620-634 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 17.42 EUR |
| 10+ | 14.92 EUR |
| 100+ | 12.43 EUR |
| 500+ | 10.97 EUR |
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Technische Details FDB1D7N10CL7 onsemi
Description: MOSFET N-CH 100V 268A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 268A (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 15V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 700µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 6V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 50 V.
Weitere Produktangebote FDB1D7N10CL7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FDB1D7N10CL7 | Hersteller : ON Semiconductor |
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auf Bestellung 737 Stücke: Lieferzeit 21-28 Tag (e) |
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FDB1D7N10CL7 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 268A 7-Pin(6+Tab) D2PAK T/R |
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FDB1D7N10CL7 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 268A 7-Pin(6+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB1D7N10CL7 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 268A 7-Pin(6+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB1D7N10CL7 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 268A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 268A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 15V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 700µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 50 V |
Produkt ist nicht verfügbar |
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FDB1D7N10CL7 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 268A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 268A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 15V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 700µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 50 V |
Produkt ist nicht verfügbar |