FDB2572 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 150V 4A/29A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 9A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 275 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.99 EUR |
| 10+ | 4.14 EUR |
| 100+ | 3.29 EUR |
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Technische Details FDB2572 onsemi
Description: MOSFET N-CH 150V 4A/29A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 29A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 9A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V.
Weitere Produktangebote FDB2572 nach Preis ab 2.41 EUR bis 5.02 EUR
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FDB2572 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB2572 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB2572 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4A 3-Pin(2+Tab) D2PAK T/R |
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FDB2572 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 29A; 135W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 29A Power dissipation: 135W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 146mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FDB2572 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 4A/29A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 9A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB2572 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 29A; 135W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 29A Power dissipation: 135W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 146mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |