FDB2614 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 200V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
auf Bestellung 24 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 10.87 EUR |
| 10+ | 9.14 EUR |
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Technische Details FDB2614 onsemi
Description: MOSFET N-CH 200V 62A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V, Power Dissipation (Max): 260W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V.
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FDB2614 | Hersteller : ONSEMI |
Description: ONSEMI - FDB2614 - Leistungs-MOSFET, n-Kanal, 200 V, 62 A, 0.0229 ohm, TO-263 (D2PAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200 Dauer-Drainstrom Id: 62 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 260 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 2 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0229 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: Lead (10-Jun-2022) |
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Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R |
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FDB2614 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK Mounting: SMD Case: D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 99nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±30V Power dissipation: 260W Drain-source voltage: 200V Drain current: 62A On-state resistance: 27mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDB2614 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 62A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB2614 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK Mounting: SMD Case: D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 99nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±30V Power dissipation: 260W Drain-source voltage: 200V Drain current: 62A On-state resistance: 27mΩ |
Produkt ist nicht verfügbar |