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FDB28N30TM onsemi

Name: FDB28N30TM
Brand: onsemi
SKU: 1658353-3
Price: 2.25 EUR
Availability: InStock

Hersteller: onsemi
Description: MOSFET N-CH 300V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V

auf Bestellung 3200 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
800+	2.8 EUR
1600+	2.37 EUR
2400+	2.25 EUR

Mindestbestellmenge: 800

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Technische Details FDB28N30TM onsemi

Description: MOSFET N-CH 300V 28A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 129mOhm @ 14A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V.

Weitere Produktangebote FDB28N30TM nach Preis ab 2.44 EUR bis 5.07 EUR

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FDB28N30TM

Hersteller : onsemi

Description: MOSFET N-CH 300V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V

auf Bestellung 3295 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
6+	4.99 EUR
10+	4.15 EUR
100+	3.3 EUR

Mindestbestellmenge: 6

FDB28N30TM

Hersteller : onsemi / Fairchild

MOSFET 300V N-Channel

auf Bestellung 20718 Stücke:

Lieferzeit 14-28 Tag (e)

Anzahl	Preis ohne MwSt
11+	5.07 EUR
13+	4.24 EUR
100+	3.38 EUR
250+	3.3 EUR
500+	2.99 EUR
800+	2.44 EUR

Mindestbestellmenge: 11

FDB28N30TM

Hersteller : ON-Semicoductor

Transistor N-Channel MOSFET; 300V; 10V; 129mOhm; 28A; 250W; -55°C~150°C; FDB28N30TM TFDB28n30tm
Anzahl je Verpackung: 10 Stücke

auf Bestellung 8 Stücke:

Lieferzeit 7-14 Tag (e)

Anzahl	Preis ohne MwSt
10+	4.77 EUR

Mindestbestellmenge: 10