FDB5800 ONSEMI
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 242W; D2PAK
Technology: PowerTrench®
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 12.6mΩ
Gate charge: 135nC
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 242W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 242W; D2PAK
Technology: PowerTrench®
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 12.6mΩ
Gate charge: 135nC
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 242W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.52 EUR |
23+ | 3.13 EUR |
28+ | 2.57 EUR |
30+ | 2.43 EUR |
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Technische Details FDB5800 ONSEMI
Description: MOSFET N-CH 60V 14A/80A D2PAK, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V, Power Dissipation (Max): 242W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V.
Weitere Produktangebote FDB5800 nach Preis ab 2.43 EUR bis 7.41 EUR
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FDB5800 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 242W; D2PAK Technology: PowerTrench® Mounting: SMD Case: D2PAK Kind of package: reel; tape Drain-source voltage: 60V Drain current: 80A On-state resistance: 12.6mΩ Gate charge: 135nC Polarisation: unipolar Kind of channel: enhanced Power dissipation: 242W Gate-source voltage: ±20V Type of transistor: N-MOSFET |
auf Bestellung 725 Stücke: Lieferzeit 7-14 Tag (e) |
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FDB5800 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 14A/80A D2PAK Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V |
auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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FDB5800 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 14A/80A D2PAK Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V |
auf Bestellung 1268 Stücke: Lieferzeit 21-28 Tag (e) |
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FDB5800 | Hersteller : onsemi / Fairchild | MOSFET 60V N-Ch Logic PowerTrench MOSFET |
auf Bestellung 5894 Stücke: Lieferzeit 14-28 Tag (e) |
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FDB5800 | Hersteller : ONSEMI |
Description: ONSEMI - FDB5800 - Leistungs-MOSFET, n-Kanal, 60 V, 80 A, 0.0046 ohm, TO-263AB, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 80 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 242 Bauform - Transistor: TO-263AB Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0046 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 1 SVHC: Lead (10-Jun-2022) |
auf Bestellung 1248 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB5800 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB5800 | Hersteller : On Semiconductor | MOSFET N-Channel 60V 14A (Ta), 80A (Tc) 242W (Tc) Surface Mount D2PAK |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB5800 Produktcode: 176853 |
Transistoren > MOSFET N-CH |
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