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FDB9503L-F085

FDB9503L-F085 onsemi

fdb9503l_f085-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 673 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.22 EUR
10+ 10.26 EUR
100+ 8.3 EUR
Mindestbestellmenge: 3
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Technische Details FDB9503L-F085 onsemi

Description: MOSFET P-CH 40V 110A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V, Power Dissipation (Max): 333W (Tj), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V, Qualification: AEC-Q101.

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FDB9503L-F085 FDB9503L-F085 Hersteller : onsemi / Fairchild FDB9503L_F085_D-1806912.pdf MOSFET P-Channel LogicLevel PowerTrench MOSFET
auf Bestellung 291 Stücke:
Lieferzeit 629-643 Tag (e)
Anzahl Preis ohne MwSt
4+14.27 EUR
10+ 12.84 EUR
25+ 11.83 EUR
100+ 10.53 EUR
250+ 10.22 EUR
500+ 8.5 EUR
800+ 8.48 EUR
Mindestbestellmenge: 4
FDB9503L-F085 Hersteller : ON Semiconductor fdb9503l_f085-d.pdf
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
FDB9503L-F085 FDB9503L-F085 Hersteller : ON Semiconductor fdb9503l_f085-d.pdf Trans MOSFET P-CH 40V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
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FDB9503L-F085 FDB9503L-F085 Hersteller : onsemi fdb9503l_f085-d.pdf Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar