FDC2612

FDC2612 onsemi / Fairchild


FDC2612_D-2312157.pdf Hersteller: onsemi / Fairchild
MOSFET 200V NCh PowerTrench
auf Bestellung 20399 Stücke:

Lieferzeit 98-112 Tag (e)
Anzahl Preis ohne MwSt
30+1.77 EUR
34+ 1.54 EUR
100+ 1.06 EUR
500+ 0.89 EUR
1000+ 0.76 EUR
3000+ 0.67 EUR
Mindestbestellmenge: 30
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Technische Details FDC2612 onsemi / Fairchild

Description: MOSFET N-CH 200V 1.1A SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V.

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FDC2612
Produktcode: 167562
fdc2612-d.pdf Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FDC2612 FDC2612 Hersteller : ON Semiconductor 3057300918998753fdc2612.pdf Trans MOSFET N-CH 200V 1.1A 6-Pin TSOT-23 T/R
Produkt ist nicht verfügbar
FDC2612 FDC2612 Hersteller : ON Semiconductor fdc2612-d.pdf Trans MOSFET N-CH 200V 1.1A 6-Pin TSOT-23 T/R
Produkt ist nicht verfügbar
FDC2612 FDC2612 Hersteller : ON Semiconductor fdc2612-d.pdf Trans MOSFET N-CH 200V 1.1A 6-Pin TSOT-23 T/R
Produkt ist nicht verfügbar
FDC2612 FDC2612 Hersteller : ONSEMI FDC2612.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.1A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC2612 FDC2612 Hersteller : onsemi fdc2612-d.pdf Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Produkt ist nicht verfügbar
FDC2612 FDC2612 Hersteller : onsemi fdc2612-d.pdf Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Produkt ist nicht verfügbar
FDC2612 FDC2612 Hersteller : ONSEMI FDC2612.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.1A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar