auf Bestellung 20899 Stücke:
Lieferzeit 351-365 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 1.77 EUR |
| 34+ | 1.54 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.76 EUR |
| 3000+ | 0.67 EUR |
| 6000+ | 0.64 EUR |
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Technische Details FDC2612 onsemi / Fairchild
Description: MOSFET N-CH 200V 1.1A SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V.
Weitere Produktangebote FDC2612
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDC2612 Produktcode: 167562 |
 Transistoren > MOSFET N-CH |
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FDC2612 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 1.1A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC2612 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 1.1A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC2612 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 1.1A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC2612 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6 Mounting: SMD Polarisation: unipolar Power dissipation: 1.6W Type of transistor: N-MOSFET On-state resistance: 1.43Ω Drain current: 1.1A Drain-source voltage: 200V Kind of package: reel; tape Case: SuperSOT-6 Gate charge: 11nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDC2612 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 1.1A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V |
Produkt ist nicht verfügbar |
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FDC2612 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 1.1A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V |
Produkt ist nicht verfügbar |
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FDC2612 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6 Mounting: SMD Polarisation: unipolar Power dissipation: 1.6W Type of transistor: N-MOSFET On-state resistance: 1.43Ω Drain current: 1.1A Drain-source voltage: 200V Kind of package: reel; tape Case: SuperSOT-6 Gate charge: 11nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |