FDC6302P Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET 2P-CH 25V 0.120A SSOT6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 120mA
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 144925 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1090+ | 0.67 EUR |
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Technische Details FDC6302P Fairchild Semiconductor
Description: MOSFET 2P-CH 25V 0.120A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 120mA, Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V, Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SuperSOT™-6.
Weitere Produktangebote FDC6302P
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|---|---|---|---|---|---|
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FDC6302P | Hersteller : ON Semiconductor / Fairchild |
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auf Bestellung 3276 Stücke: Lieferzeit 14-28 Tag (e) |
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FDC6302P | Hersteller : ON Semiconductor |
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FDC6302P | Hersteller : onsemi |
Description: MOSFET 2P-CH 25V 0.120A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 120mA Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
Produkt ist nicht verfügbar |