FDC6320C Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N/P-CH 25V 0.22A SSOT6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 272789 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1256+ | 0.58 EUR |
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Technische Details FDC6320C Fairchild Semiconductor
Description: MOSFET N/P-CH 25V 0.22A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SuperSOT™-6.
Weitere Produktangebote FDC6320C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FDC6320C | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25/-25V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Case: SuperSOT-6 On-state resistance: 9/10Ω Power dissipation: 0.9W Polarisation: unipolar Drain current: 0.22/-0.12A Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FDC6320C | Hersteller : onsemi |
Description: MOSFET N/P-CH 25V 0.22A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
Produkt ist nicht verfügbar |
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FDC6320C | Hersteller : onsemi |
Description: MOSFET N/P-CH 25V 0.22A SSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
Produkt ist nicht verfügbar |
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FDC6320C | Hersteller : ON Semiconductor / Fairchild |
MOSFET SSOT-6 COMP N-P-CH |
Produkt ist nicht verfügbar |
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| FDC6320C | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25/-25V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Case: SuperSOT-6 On-state resistance: 9/10Ω Power dissipation: 0.9W Polarisation: unipolar Drain current: 0.22/-0.12A Kind of channel: enhanced |
Produkt ist nicht verfügbar |