FDC6333C ON Semiconductor
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.27 EUR |
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Technische Details FDC6333C ON Semiconductor
Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A, Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V, Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active.
Weitere Produktangebote FDC6333C nach Preis ab 0.23 EUR bis 1.43 EUR
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FDC6333C | Hersteller : ON Semiconductor |
 Trans MOSFET N/P-CH 30V 2.5A/2A 6-Pin TSOT-23 T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6333C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 30V 2.5A/2A 6-Pin TSOT-23 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6333C | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6333C | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 47474 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6333C | Hersteller : onsemi / Fairchild |
MOSFET 30V/-30V N/P |
auf Bestellung 77387 Stücke: Lieferzeit 14-28 Tag (e) |
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FDC6333C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 30V 2.5A/2A 6-Pin TSOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6333C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 30V 2.5A/2A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC6333C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 30V 2.5A/2A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC6333C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 30V 2.5A/2A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC6333C | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Drain-source voltage: 30/-30V Drain current: 2.5/-2A On-state resistance: 150/220mΩ Type of transistor: N/P-MOSFET Power dissipation: 0.96W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.6/5.7nC Technology: PowerTrench® Case: SuperSOT-6 Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±16/±25V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDC6333C | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Drain-source voltage: 30/-30V Drain current: 2.5/-2A On-state resistance: 150/220mΩ Type of transistor: N/P-MOSFET Power dissipation: 0.96W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.6/5.7nC Technology: PowerTrench® Case: SuperSOT-6 Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±16/±25V |
Produkt ist nicht verfügbar |