auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6000+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDC634P ON Semiconductor
Description: MOSFET P-CH 20V 3.5A SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SuperSOT™-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V.
Weitere Produktangebote FDC634P nach Preis ab 0.28 EUR bis 1.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDC634P | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 20V 3.5A 6-Pin TSOT-23 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FDC634P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 3.5A 6-Pin TSOT-23 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FDC634P | Hersteller : onsemi / Fairchild |
MOSFET SSOT-6 P-CH -20V |
auf Bestellung 1962 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
FDC634P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 3.5A 6-Pin TSOT-23 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| FDC634P | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3.5A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
| FDC634P | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3.5A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
|
|
FDC634P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 3.5A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDC634P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 3.5A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDC634P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 3.5A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDC634P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 3.5A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
FDC634P | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Case: SuperSOT-6 On-state resistance: 0.13Ω Power dissipation: 1.6W Gate charge: 10nC Polarisation: unipolar Technology: PowerTrench® Drain current: -3.5A Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDC634P | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Case: SuperSOT-6 On-state resistance: 0.13Ω Power dissipation: 1.6W Gate charge: 10nC Polarisation: unipolar Technology: PowerTrench® Drain current: -3.5A Kind of channel: enhanced |
Produkt ist nicht verfügbar |