FDC637BNZ ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.21 EUR |
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Technische Details FDC637BNZ ON Semiconductor
Description: MOSFET N-CH 20V 6.2A SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 10 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10.
Weitere Produktangebote FDC637BNZ nach Preis ab 0.21 EUR bis 1.04 EUR
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FDC637BNZ | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 20V 6.2A 6-Pin TSOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC637BNZ | Hersteller : onsemi |
Description: MOSFET N-CH 20V 6.2A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 |
auf Bestellung 24500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC637BNZ | Hersteller : onsemi |
Description: MOSFET N-CH 20V 6.2A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 |
auf Bestellung 24500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC637BNZ | Hersteller : onsemi / Fairchild |
MOSFET 20V N-Channel 2.5V Spec PowerTrench |
auf Bestellung 12407 Stücke: Lieferzeit 14-28 Tag (e) |
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FDC637BNZ | Hersteller : ONSEMI |
Description: ONSEMI - FDC637BNZ - Leistungs-MOSFET, n-Kanal, 20 V, 6.2 A, 0.021 ohm, SuperSOT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 1.6W Bauform - Transistor: SuperSOT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.021ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 665 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDC637BNZ | Hersteller : On Semiconductor/Fairchild |
N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 6.2A, 24mOm SuperSOT-6 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC637BNZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 6.2A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC637BNZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 6.2A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC637BNZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SuperSOT-6 On-state resistance: 41mΩ Power dissipation: 1.6W Gate charge: 12nC Polarisation: unipolar Technology: PowerTrench® Drain current: 6.2A Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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FDC637BNZ | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SuperSOT-6 On-state resistance: 41mΩ Power dissipation: 1.6W Gate charge: 12nC Polarisation: unipolar Technology: PowerTrench® Drain current: 6.2A Kind of channel: enhanced |
Produkt ist nicht verfügbar |