FDC6506P

FDC6506P ON Semiconductor


fdc6506p-d.pdf Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 1.8A 6-Pin TSOT-23 T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details FDC6506P ON Semiconductor

Description: MOSFET 2P-CH 30V 1.8A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.8A, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Obsolete.

Weitere Produktangebote FDC6506P

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDC6506P Hersteller : ON Semiconductor fdc6506p-d.pdf Trans MOSFET P-CH 30V 1.8A 6-Pin TSOT-23 T/R
Produkt ist nicht verfügbar
FDC6506P FDC6506P Hersteller : onsemi fdc6506p-d.pdf Description: MOSFET 2P-CH 30V 1.8A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Produkt ist nicht verfügbar
FDC6506P FDC6506P Hersteller : onsemi fdc6506p-d.pdf Description: MOSFET 2P-CH 30V 1.8A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Produkt ist nicht verfügbar
FDC6506P FDC6506P Hersteller : onsemi / Fairchild FDC6506P_D-2312309.pdf MOSFET SSOT-6 P-CH -30V
Produkt ist nicht verfügbar