auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDC855N ON Semiconductor
Description: MOSFET N-CH 30V 6.1A SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V.
Weitere Produktangebote FDC855N nach Preis ab 0.28 EUR bis 1.48 EUR
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FDC855N | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC855N | Hersteller : onsemi |
Description: MOSFET N-CH 30V 6.1A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC855N | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
auf Bestellung 5814 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC855N | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
auf Bestellung 5814 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC855N | Hersteller : onsemi / Fairchild |
MOSFET 30V Single NCh Logic Level PowerTrench |
auf Bestellung 30313 Stücke: Lieferzeit 14-28 Tag (e) |
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FDC855N | Hersteller : onsemi |
Description: MOSFET N-CH 30V 6.1A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V |
auf Bestellung 6370 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDC855N | Hersteller : FAIRCHILD |
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auf Bestellung 2660 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDC855N | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W; TSOT23-6 Mounting: SMD Case: TSOT23-6 On-state resistance: 39.3mΩ Pulsed drain current: 20A Power dissipation: 1.6W Gate charge: 13nC Polarisation: unipolar Drain current: 6.1A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDC855N | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC855N | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC855N | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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| FDC855N | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W; TSOT23-6 Mounting: SMD Case: TSOT23-6 On-state resistance: 39.3mΩ Pulsed drain current: 20A Power dissipation: 1.6W Gate charge: 13nC Polarisation: unipolar Drain current: 6.1A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |